SrBi2Ta2O9 thin film capacitor model including polarization reversal response for nanosecond range circuit simulation of ferroelectric nonvolatile memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 621-624

  Takeo, Masato ^a   Azuma, Masamichi ^a   Hirano, Hiroshige ^a   Asari, Kohji ^a   Moriwaki, Nobuyuki ^a   Otsuki, Tatsuo ^a   Tatsuuma, Kenichiro ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NONVOLATILE FERROELECTRIC RANDOM ACCESS MEMORY (NVFRAM); PARAMETER EXTRACTION METHOD; POLARIZATION REVERSAL RESPONSE;

COMPUTER SIMULATION; DIELECTRIC FILMS; FERROELECTRIC DEVICES; MATHEMATICAL MODELS; POLARIZATION; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; THIN FILM DEVICES;

CAPACITORS;

EID: 84886448173     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)