Lateral DMOS design for ESD robustness

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 375-378

  Duvvury, Charvaka ^a   Carvajal, Fred ^a   Jones, Clif ^a   Briggs, David ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL HEATING EFFECTS; ELECTROSTATIC DISCHARGES (ESD);

ELECTRIC DISCHARGES; ELECTRIC LOSSES; ELECTROSTATICS; GATES (TRANSISTOR); HEAT CONDUCTION; SEMICONDUCTOR DEVICE STRUCTURES;

MOSFET DEVICES;

EID: 84886448166     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)