Single layer nitride capacitor dielectric film and high concentration doping technology for 1 Gb/4 Gb trench-type DRAMs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 265-268

  Saida, Shigehiko ^a   Sato, Tsutomu ^a   Mizushima, Ichiro ^a   Ozawa, Yoshio ^a   Tsunashima, Yoshitaka ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM);

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); DIELECTRIC FILMS; DOPING (ADDITIVES); PERMITTIVITY; RANDOM ACCESS STORAGE; SILICON NITRIDE;

CAPACITORS;

EID: 84886448160     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)