Highly reliable self-planarizing low-k intermetal dielectric for sub-quarter micron interconnects

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 785-788

  Matsuura, M ^a   Tottori, I ^a   Goto, K ^a   Maekawa, K ^a   Mashiko, Y ^a   Hirayama, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METHYLSILANE; SELF PLANARIZING LOW PERMITTIVITY INTERMETAL DIELECTRICS; SUB QUARTER MICRON INTERCONNECTS;

CHEMICAL VAPOR DEPOSITION; DEGASSING; ELECTRIC RESISTANCE; HYDROGEN PEROXIDE; INTERMETALLICS; PERMITTIVITY; SILANES;

DIELECTRIC MATERIALS;

EID: 84886448143     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)