Thickness and polarity dependence of intrinsic breakdown of ultra-thin reoxidized-nitride for DRAM technology applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 77-80

  Wu, E ^a   Hwang, C ^a   Vollertsen, R ^a   Shen, H ^a   Kleinhenz, R ^a   Radens, C ^a   Strong, A ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY (DRAM); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB); ULTRATHIN REOXIDIZED NITRIDE;

CAPACITORS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; NITRIDES; SPURIOUS SIGNAL NOISE; ULTRATHIN FILMS;

RANDOM ACCESS STORAGE;

EID: 84886448133     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)