Impact of plasma-charging damage polarity on MOSFET noise

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 437-440

  Cheung, K P ^a   Martin, S ^a   Misra, D ^a   Steiner, K ^a   Colonell, J I ^a   Chang, C P ^a   Lai, W Y C ^a   Liu, C T ^a   Liu, R ^a   Pai, C S ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA CHARGING DAMAGE POLARITY;

CARRIER CONCENTRATION; ELECTRIC CHARGE; GATES (TRANSISTOR); INTERFACES (MATERIALS); PLASMA APPLICATIONS; SPURIOUS SIGNAL NOISE; STRESS ANALYSIS;

MOSFET DEVICES;

EID: 84886448130     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)