Room temperature Nb/Nb oxide-based single-electron transistors

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 175-178

  Shirakashi, Jun ichi ^a   Matsumoto, Kazuhiko ^a   Miura, Naruhisa ^a   Konagai, Makoto ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SINGLE ELECTRON TRANSISTORS (SET);

ANODIC OXIDATION; HIGH TEMPERATURE OPERATIONS; NIOBIUM; SEMICONDUCTOR DEVICE MANUFACTURE; THERMOOXIDATION; TUNNEL JUNCTIONS;

TRANSISTORS;

EID: 84886448122     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)