High-temperature reliability behavior of SSI-Flash E2PROM devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 93-96

  De Blauwe, J ^a   Wellekens, D ^a   Groeseneken, G ^a   Haspeslagh, L ^a   Van Houdt, J ^a   Deferm, L ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); SOURCE SIDE INJECTION (SSI);

ELECTRIC CHARGE; HIGH TEMPERATURE PROPERTIES; NONVOLATILE STORAGE; THERMAL EFFECTS;

PROM;

EID: 84886448055     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)