Overview of catastrophic failures of freewheeling diodes in power electronic circuits

Microelectronics Reliability

Volumn 53, Issue 9-11, 2013, Pages 1788-1792

  Wu, R ^a   Blaabjerg, F ^a   Wang, H ^a   Liserre, M ^a  

^a AALBORG UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CATASTROPHIC FAILURES; ELECTRONIC PRODUCT; EMERGING APPLICATIONS; FAILURE MECHANISM; FREEWHEELING DIODES; MORE ELECTRIC AIRCRAFT; RENEWABLE ENERGY SYSTEMS; SAFETY REQUIREMENTS;

POWER ELECTRONICS; RELIABILITY; RENEWABLE ENERGY RESOURCES;

DIODES;

EID: 84885957188     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2013.07.126     Document Type: Conference Paper

References (39)

1. Wang H, Liserre M, Blaabjerg F. Toward reliable power electronics-challenges, design tools and opportunities. In: IEEE Industrial Electronics Magazine, vol. 7, June 2013. p. 17-26.
2. Wolfgang E. Examples for failures in power electronics systems. In: Presented at ECPE tutorial on reliability power electronic system, Nuremberg, Germany; April 2007.
3. Fuchs FW. Some diagnosis methods for voltage source inverters in variable speed drives with induction machines - A survey. In: Proceedings of IEEE industrial electronics society annual conference; 2003. p. 1378-1385.
4. S. Yang, A.T. Bryant, P.A. Mawby, D. Xiang, L. Ran, and P. Tavner An industry-based survey of reliability in power electronic converters IEEE Trans Ind Appl 47 3 2011 1441 1451
5. N.M. Vichare, and M.G. Pecht Prognostics and health management of electronics IEEE Trans Compon Packag Technol 29 1 2006 222 229
6. M.T. Rahimo, and N.Y.A. Shammas Freewheeling diode reverse-recovery failure modes in IGBT applications IEEE Trans Ind Appl 37 2 2001 661 670
7. M. Ciappa Selected failure mechanisms of modern power modules Microelectron Reliab 42 4-5 2002 653 667
8. Swamy M, Rossiter S. Typical problems encountered with variable frequency drives in the industry. In: Proc Ind Appl Soc Ann Meet; October 1993. p. 503-10.
9. Wintrich A, Nicolai U, Tursky W, Reimann T. Application manual power semiconductors. ISLE Verlag, ISBN: 978-3-938843-66-6; 2011. p. 30-6.
10. Ciappa M., Wolfgang F. Lifetime prediction of IGBT modules for traction applications. In: Proceedings of 38th annual 2000 IEEE international reliability physics, symposium; 2000. p. 210-6.
11. A.Q. Huang, V. Temple, Y. Liu, and Y. Li Analysis of the turn-off failure mechanism of silicon power diode Solid-State Electron 47 4 2003 727 739
12. J. Baumann, Ch. Kaufmann, M. Rennau, Th. Werner, and T. Gessner Investigation of copper metallization induced failure of diode structures with and without a barrier layer Microelectron. Eng. 33 1-4 1997 283 291
13. Kim SS, Oh KH, et al. Degradation of avalanche ruggedness of power diodes by thermally induced local breakdown. In: Proceedings of 37th IEEE annual power electronics specialists conference; June 2006. p. 1-5.
14. Obreja VVN, Codreanu C, Nuttall KI, Buiu O. Reverse current instability of power silicon diodes (thyristors) at high temperature and the junction surface leakage current. In: Proceedings of the IEEE international symposium on industrial electronics; June 2005. p. 417-22.
15. Obreja VVN, Podaru C, Manea E, Obreja A, Svasta P. Failure analysis of diode (thyristor) dice from power semiconductor modules after operation above the maximum specified temperature. In: Proceedings of 1st electronics system integration technology conference; 2007. p. 1230-5.
16. Obreja VVN. On the reliability of power silicon rectifier diodes above the maximum permissible operation junction temperature. In: Proceedings of IEEE international symposium on industrial electronics; July 2006. p. 835-40.
17. Obreja VVN. On the maximum permissible working voltage of commercial power silicon diodes and thyristors. In: Proceeding of IEEE international symposium on industrial, electronics; June 2007. p. 401-6.
18. V.V.N. Obreja, C. Codreanu, D. Poenar, and O. Buiu Edge current induced failure of semiconductor PN junction during operation in the breakdown region of electrical characteristic Microelectron. Reliab. 51 3 2011 536 542
19. M. Diatta, D. Tremouilles, E. Bouyssou, R. Perdreau, C. Anceau, and M. Bafleur Understanding the failure mechanisms of protection diodes during system level ESD: toward repetitive stresses robustness IEEE Trans Electron Devices 59 1 2012 108 113
20. M.T. Rahimo, and N.Y.A. Shammas Design considerations of the diode effective area with regard to the reverse recovery performance Microelectron J 30 6 1999 499 503
21. P. Cova, R. Menozzi, and M. Portesine Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design Microelectron J 37 5 2006 409 416
22. P. Cova, R. Menozzi, and M. Portesine Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery Microelectron Reliab 43 1 2003 81 87
23. P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, and R. Mosca Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications Solid-State Electron 49 2 2005 183 191
24. F. Bertoluzza, P. Cova, and N. Delmonte Coupled measurement-simulation procedure for very high power fast recovery - soft behavior diode design and testing Microelectron Reliab 50 9-11 2010 1720 1724
25. Felsl HP, Pfaffenlehner M, et al. The CIBH diode - great improvement for ruggedness and softness of high voltage diodes. In: Proceedings of 20th international symposium on power semiconductor devices and IC's; May 2008. p. 173-6.
26. H. Egawa Avalanche characteristics and failure mechanism of high voltage diodes IEEE Trans Electron Devices 13 11 1966 754 758
27. M. Domeij, B. Breitholtz, L.M. Hillkirk, J. Linnros, and M. Ostling Dynamic avalanche in 3.3-kV Si power diodes IEEE Trans Electron Devices 46 4 1999 781 786
28. J. Oetjen, R. Jungblut, U. Kuhlmann, J. Arkenau, and R. Sittig Current filamentation in bipolar power devices during dynamic avalanche breakdown Solid-State Electron 44 1 2000 117 123
29. Lutz J, Scheuermann U, Schlangenotto H, de Doncker R. Semiconductor power devices. Springer Verlag; 2011. ISBN: 3642111246.
30. Domeij M, Breitholtz B, et al. Avalanche injection in high voltage Si P-i-N diodes measurements and device simulations. In: Proceedings of 1997 IEEE international symposium on power semiconductor devices and IC's; May 1997. p. 125-8.
31. Tomomatsu Y, Suekawa E, Enjyoji T, et al. An analysis and improvement of destruction immunity during reverse recovery for high voltage planar diodes under high dIrr/dt condition. In: Proceedings of 8th international symposium on power semiconductor devices and ICs; May 1996. p. 353-6.
32. R. Baburske, B. Heinze, J. Lutz, and F. Niedernostheide Charge-carrier plasma dynamics during the reverse-recovery period in p+-n-n+ diodes IEEE Trans Electron Devices 55 8 2008 2164 2172
33. Baburske R, Heinze B, Niedernostheide F, et al. On the formation of stationary destructive cathode-side filaments in p+-n-n+ diodes. In: Proceedings of 21st international symposium on power semiconductor devices & IC's; June 2009. p. 41-4.
34. Mulay A, Trivedi M, Shenai K. Dynamic avalanching considerations in optimization of reverse conducting diode in IGBT modules. In: Proceedings of the 1998 bipolar/BiCMOS circuits and technology meeting; September 1998. p. 195-8.
35. M. Domeij, and B. Breitholtz Stable dynamic avalanche in Si power diodes Appl Phys Lett 74 21 1999 3170 3172
36. M. Domeij, J. Lutz, and D. Silber On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche IEEE Trans Electron Devices 50 2 2003 486 493
37. Pan Z, Holland S, et al. Improved impact-ionization modelling and validation with pn-junction diodes. In: Proceedings of 2010 international conference on simulation of semiconductor processes and devices; September 2010. p. 287-90.
38. S. Milady, D. Silber, F.-J. Niedernostheide, and H.P. Felsl Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities Microelectron J 39 6 2008 857 867
39. Lutz J, Dobler R, Mari J, Menzel M. Short circuit III in high power IGBTs. In: Proceedings of 13th European conference on power electronics and applications; September 2009. p. 1-8.