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Journal of Solid State Chemistry

Volumn 205, Issue , 2013, Pages 39-43

Hall mobility in tin iodide perovskite CH3NH3SnI 3: Evidence for a doped semiconductor

(4) Takahashi, Yukari a,b Hasegawa, Hiroyuki a Takahashi, Yukihiro a Inabe, Tamotsu a

a HOKKAIDO UNIVERSITY (Japan)

b INSTITUTE OF MATERIALS STRUCTURE SCIENCE (Japan)

Author keywords

Hall effect; Hole doping; Mobility; Semiconductor; Tin iodide perovskite

Indexed keywords

CALCULATIONS; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTROMAGNETIC WAVE ABSORPTION; ELECTRONIC STRUCTURE; HALL EFFECT; HOLE CONCENTRATION; HOLE MOBILITY; LIGHT ABSORPTION; METAL HALIDES; PEROVSKITE; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; THERMOELECTRICITY; TIN;

AB INITIO CALCULATIONS; ELECTRICAL CONDUCTIVITY; HALL EFFECT MEASUREMENT; HOLE-DOPING; INTRINSIC SEMICONDUCTORS; METALLIC CONDUCTIVITY; TIN-IODIDE; WIDE TEMPERATURE RANGES;

HALL MOBILITY;

EID: 84885653534 PISSN: 00224596 EISSN: 1095726X Source Type: Journal
DOI: 10.1016/j.jssc.2013.07.008 Document Type: Article

Times cited : (285)

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