Metal Gate/High-κ dielectric gate stack reliability; or how i learned to live with trappy oxides

ECS Transactions

Volumn 53, Issue 3, 2013, Pages 187-192

  Linder, Barry P ^a   Cartier, E ^a   Krishnan, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; CIRCUIT OPERATION; DIELECTRIC GATES; GATE OXIDE; METAL GATE; RING OSCILLATOR STRUCTURES;

GATE DIELECTRICS; SILICON;

INTEGRATED CIRCUITS;

EID: 84885590980     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05303.0187ecst     Document Type: Conference Paper

References (9)

1. E. Cartier, et al., 2011 Electron Devices Meeting (IEDM), pp. 18.4.1-18.4.4 (2011).
2. S. Krishnan, 2011 Electron Devices Meeting (IEDM), pp. 28.1.1 - 28.1.4 (2011).
3. J. Franco, et. al., Microelectronic Engineering 88.7, pp. 1388-1391 (2011).
4. B. P. Linder, et. al., 2009 IEEE Reliability Physics Symposium, pp. 510-513 (2009).
5. M. Wang, et. al., submitted to Electron Device Letters.
6. A. Kerber, et. al., Electron Device Letters 30.12, pp. 1347-1349 (2009).
7. E. Wu, et. al. 2012 Electron Devices Meeting (IEDM), pp. 653-656 (2012).
8. B. P. Linder, et. al., IEEE Integrated Reliability Workshop (IRW), pp. 1-6 (2011).
9. J. Kim, et. al., 2011 IEEE Reliability Physics Symposium, pp. 47-50 (2011).