Using SPICE to calculate MOSFET operating temperature

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn , Issue , 1992, Pages 901-906

  Menhart, Steve ^a  

^a UNIVERSITY OF ARKANSAS AT LITTLE ROCK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES;

DEVICE TEMPERATURE; OPERATING TEMPERATURE; SEMICONDUCTOR CHIPS; SIMULATION TIME; SPICE MODELING; THERMAL IMPEDANCE; THERMAL TIME CONSTANTS; TRANSIENT SIMULATION;

SPICE;

EID: 84885480890     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.1992.254787     Document Type: Conference Paper

References (6)

1. M. Kubat, Power Semiconductors, New York: Springer-Verlag, 1984, ch. 10, pp. 399-407.
2. R. G. Hoft, Semiconductor Power Electronics, New York: Van Nostrand Reinhold, 1986, ch. 2, pp. 42-51.
3. Power MOSFET Transistor Data, 3rd ed., Motorola Inc., 1988.
4. D. L. Blackburn and D. W. Berning, "Power MOSFET Temperature Measurements, " 13th Annual IEEE PESC, 1982, pp. 400-407.
5. F. F. Oettinger, D. L. Blackburn, and S. Rubin, "Thermal characterization of power transistors, " IEEE Trans. on Elec. Dev., vol. ED-23, No. 8, pp. 831-838, August 1976.
6. B. J. Baliga, Modern Power Devices, New York: Wiley Interscience, 1987, ch. 6, pp. 327.