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Volumn 378, Issue , 2013, Pages 189-192
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Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy
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Author keywords
Impurity diffusion; Molecular beam epitaxy; Semiconducting silicides; Solar cell
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Indexed keywords
ACTIVATION ENERGY;
ALUMINUM;
DIFFUSION;
EPITAXIAL GROWTH;
GRAIN BOUNDARIES;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
MASS SPECTROMETRY;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SECONDARY ION MASS SPECTROMETRY;
SILICIDES;
SOLAR CELLS;
TRANSMISSION ELECTRON MICROSCOPY;
X RAY DIFFRACTION;
GRAIN SIZE;
GRAIN-BOUNDARY DIFFUSION;
IMPURITY ATOMS;
IMPURITY DIFFUSION;
LATTICE DIFFUSION;
POST ANNEALING;
SI (1 1 1);
TRANSMISSION ELECTRON MICROSCOPY IMAGES;
ANNEALING;
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EID: 84885468140
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.12.051 Document Type: Article |
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Times cited : (10)
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References (18)
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