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Volumn 88, Issue 7, 2013, Pages

Carrier doping effect for transport properties of a spin-orbit Mott insulator Ba2IrO4

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EID: 84884512071     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.075137     Document Type: Article
Times cited : (24)

References (27)
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    • 4, which are almost the same (i.e., one value is close to another one). The small difference between the values seems to be within an acceptable error range for grain-boundary scattering in the ceramic samples. It can be understood that the resistivity data for the two samples are continuously connected in essence.
    • 4, which are almost the same (i.e., one value is close to another one). The small difference between the values seems to be within an acceptable error range for grain-boundary scattering in the ceramic samples. It can be understood that the resistivity data for the two samples are continuously connected in essence.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.