Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6and Ge2H6

Solid-State Electronics

Volumn 83, Issue , 2013, Pages 2-9

  Wirths, S ^a   Buca, D ^a   Tiedemann, A T ^a   Bernardy, P ^a   Hollander B ^a   Stoica, T ^a   Mussler, G ^a   Breuer, U ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Channeling; Chemical vapor deposition technique; Semiconductor doping; SiGe

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; GERMANIUM; GROWTH KINETICS; GROWTH TEMPERATURE; SEMICONDUCTOR DOPING; SILICON ALLOYS; SURFACE REACTIONS; TEMPERATURE; VAPOR DEPOSITION;

CHANNELING; CHEMICAL VAPOR; GROWTH ACTIVATION ENERGIES; LOW GROWTH TEMPERATURE; LOW-TEMPERATURE REGIME; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SIGE; SURFACE LIMITED REACTIONS;

SILICON;

EID: 84884354912     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.01.032     Document Type: Conference Paper

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