Novel half-metal and spin gapless semiconductor properties in N-doped silicene nanoribbons

Journal of Applied Physics

Volumn 113, Issue 15, 2013, Pages

  Zheng, Fu Bao ^a   Zhang, Chang Wen ^a   Wang, Pei Ji ^a   Li, Sheng Shi ^a  

^a UNIVERSITY OF JINAN   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EDGE SITES; ENERGETIC AND ELECTRONIC PROPERTIES; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; HALF METALS; SEMICONDUCTOR PROPERTIES; SPIN-POLARIZED; SPIN-POLARIZED CURRENTS;

ATOMS; ELECTRONIC PROPERTIES; NANORIBBONS; SILICON; SPIN POLARIZATION;

SEMICONDUCTING SILICON;

EID: 84884301166     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801882     Document Type: Article

References (22)

1. C. L. Lin, R. Arafune, K. Kawahara, N. Tsukahara, E. Minamitani, Y. Kim, N. Takagi, and M. Kawai, Appl. Phys. Express 5, 045802 (2012). 10.1143/APEX.5.045802
2. B. Feng, Z. Ding, S. Meng, Y. Yao, X. He, P. Cheng, L. Chen, and K. Wu, Nano Lett. 12, 3507 (2012). 10.1021/nl301047g
3. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Phys. Rev. Lett. 108, 155501 (2012). 10.1103/PhysRevLett.108.155501
4. H. Sahin, S. Cahangirov, M. Topsakal, E. Bekaroglu, E. Akturk, R. T. Senger, and S. Ciraci, Phys. Rev. B 80, 155453 (2009). 10.1103/PhysRevB.80. 155453
5. L. Chen, C. C. Liu, B. Feng, X. He, P. Cheng, Z. Ding, S. Meng, Y. Yao, and K. Wu, Phys. Rev. Lett. 109, 056804 (2012). 10.1103/PhysRevLett.109.056804
6. T. Morishita, K. Nishio, and M. Mikami, Phys. Rev. B 77, 081401 (2008). 10.1103/PhysRevB.77.081401
7. M. J. S. Spencer, T. Morishita, and I. K. Snook, Nanoscale 4, 2906 (2012). 10.1039/c2nr30100h
8. X. Yang and J. Ni, Phys. Rev. B 72, 195426 (2005). 10.1103/PhysRevB.72. 195426
9. B. Aufray, A. Kara, S. Vizzini, H. Oughaddou, C. Leandri, B. Ealet, and G. Le Lay, Appl. Phys. Lett. 96, 183102 (2010). 10.1063/1.3419932
10. P. De Padova, C. Quaresima, B. Olivieri, P. Perfetti, and G. Le Lay, Appl. Phys. Lett. 98, 081909 (2011). 10.1063/1.3557073
11. P. De Padova, C. Quaresima, C. Ottaviani, P. M. Sheverdyaeva, P. Moras, C. Carbone, D. Topwal, B. Olivieri, A. Kara, H. Oughaddou, B. Aufray, and G. Le Lay, Appl. Phys. Lett. 96, 261905 (2010). 10.1063/1.3459143
12. C. W. Zhang and S. S. Yan, J. Phys. Chem. C 116, 4163 (2012) 10.1021/jp2104177.
13. F. B. Zheng and C. W. Zhang, Nanoscale Res. Lett. 7, 422 (2012). 10.1186/1556-276X-7-422
14. X. L. Wang, Phys. Rev. Lett. 100, 156404 (2008) 10.1103/PhysRevLett.100. 156404.
15. G. Kresse and J. Furthmuller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
16. G. Kresse and J. Furthmuller, Comput. Mater. Sci. 6, 15 (1996). 10.1016/0927-0256(96)00008-0
17. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
18. J. P. Perdew, Phys. Rev. B 46, 6671 (1992). 10.1103/PhysRevB.46.6671
19. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
20. S. Dutta and S. K. Pati, J. Phys. Chem. B 112, 1333 (2008). 10.1021/jp710637c
21. N. Gorjizadeh, A. A. Farajian, K. Esfarjani, and Y. Kawazoe, Phys. Rev. B 78, 155427 (2008). 10.1103/PhysRevB.78.155427
22. F. B. Zheng, C. W. Zhang, S. S. Yan, and F. Li, J. Mater. Chem. C 1, 2735 (2013) 10.1039/c3tc30097h.