Power scaling of GaN laser diode pumped pr-lasers

Advanced Solid-State Photonics, ASSP 2008

Volumn , Issue , 2008, Pages

  Richter, A ^a   Heumann, E ^a   Huber, G ^a   Parisi, D ^b   Tonelli, M ^b  

^a UNIVERSITY OF HAMBURG   (Germany)

^b UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; HARMONIC GENERATION; III-V SEMICONDUCTORS; SEMICONDUCTOR LASERS;

DIODE LASER PUMPING; GAN LASER DIODES; HOST MATERIALS; POWER-SCALING;

PUMPING (LASER);

EID: 84884292639     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1364/assp.2008.mb2     Document Type: Conference Paper

References (6)

1. 4 laser excited by 480nm optically pumped semiconductor laser" in Technical Digest CLEO'04, paper CFE2, (San Francisco, 2004)
2. A. Richter, E. Heumann, E. Osiac, G. Huber, W. Seelert, and A. Diening, "Diode pumping of a continuous-wave Pr3+-doped LiYF4 laser", Optics Letters. 29, 2638-2670 (2004)
3. A. Richter, E. Heumann, E. Osiac, H. Scheife, G. Huber, W. Seelert, and A. Diening, "Semiconductor laser pumping of a continuous-wave Pr3+:LiYF4 laser emitting at several wavelengths", in Technical Digest CLEO'05, paper CMAA4, pp. 476-478, (Baltimore, 2005)
4. A. Richter, et al. "Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers," Opt. Express 14, 3282-3287 (2006).
5. A. Richter, N. Pavel, E. Heumann, G. Huber, D. Parisi, A. Toncelli, M. Tonelli, A. Diening, and W. Seelert, "Power scaling of semiconductor laser pumped Praseodymium-lasers", Opt. Express 14(8), 3282-3287 (2006)
6. 10 red laser", Optics Letters 32 pp. 1462-1464 (2007)