Mechanisms of parasitic crystallites formation in ZrB 2 (0 0 0 1) buffer layer grown on Si(1 1 1)

Applied Surface Science

Volumn 284, Issue , 2013, Pages 432-437

  Fleurence, A ^a   Zhang, W ^a   Hubault, C ^a   Yamada Takamura, Y ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Misoriented crystallites; Si(1 1 1); Silicene; STM; UHV CVE

Indexed keywords

ANISOTROPY; BUFFER LAYERS; CRYSTALLITES; III-V SEMICONDUCTORS; OPTICAL WAVEGUIDES; SILICENE; ZIRCONIUM COMPOUNDS;

ANISOTROPIC EPITAXIAL STRAINS; ANISOTROPIC GROWTH; DEFECT-FREE; EPITAXIAL RELATIONSHIPS; GAN BASED LED; MISORIENTATIONS; SI (1 1 1); UHV-CVE;

BORON COMPOUNDS;

EID: 84883886967     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.07.115     Document Type: Article

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