Examination of physical origins limiting effective mobility of Ge MOSFETs and the improvement by atomic deuterium annealing

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Zhang, R ^a,b   Lin, J C ^a   Yu, X ^a   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DEUTERIUM; DOMINATING FACTORS; EFFECTIVE ELECTRON MOBILITY; EFFECTIVE MOBILITIES; GE MOSFETS; SURFACE ROUGHNESS SCATTERING; TRAP DENSITY; TRAPPING EFFECTS;

ATOMS; DEUTERIUM; ELECTRON MOBILITY; MOSFET DEVICES; SURFACE ROUGHNESS;

GERMANIUM;

EID: 84883437368     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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3. C. Lee et al., IEDM, 416 (2010).
4. R. Zhang et al., IEDM, 642 (2011).
5. S. Gupta et al., VLSI, 95 (2012).
6. R. Zhang et al., IEDM, 371 (2012).
7. Y. Zhao et al., TED, 57, 2057 (2010).