Strained extremely-thin body In0.53Ga0.47As-on- insulator MOSFETs on Si substrates

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2013, Pages

  Kim, S H ^a   Yokoyama, M ^a   Nakane, R ^a   Ichikawa, O ^b   Osada, T ^b   Hata, M ^b   Takenaka, M ^a   Takagi, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND EDGE; DIRECT WAFER BONDING; EFFECTIVE MOBILITIES; FREE ELECTRON CONCENTRATION; HALL MEASUREMENTS; INGAAS MOSFET; MOSFETS; SI SUBSTRATES;

MOSFET DEVICES; SEMICONDUCTING INDIUM; SILICON; TENSILE STRAIN;

GALLIUM ALLOYS;

EID: 84883398115     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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