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Volumn , Issue , 2013, Pages

A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING NOISE; GUARD-RINGS; INTERFACE CHARGE; INTERFACE TRAP DENSITY; INVERSION CHARGE; SHIELD LAYERS; SI SUBSTRATES; THROUGH-SILICON-VIA (TSV);

EID: 84883375174     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (5)

References (5)
  • 2
  • 4
  • 5
    • 84883324344 scopus 로고    scopus 로고
    • M.Casse et al., APL, pp 123506, 2010
    • (2010) APL , pp. 123506
    • Casse, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.