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Volumn , Issue , 2013, Pages
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A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge
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Author keywords
[No Author keywords available]
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Indexed keywords
COUPLING NOISE;
GUARD-RINGS;
INTERFACE CHARGE;
INTERFACE TRAP DENSITY;
INVERSION CHARGE;
SHIELD LAYERS;
SI SUBSTRATES;
THROUGH-SILICON-VIA (TSV);
INTERFACES (MATERIALS);
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EID: 84883375174
PISSN: 07431562
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (5)
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