Impurity level evolution and majority carrier-type inversion of Ag 2S under extreme compression: Experimental and theoretical approaches

Applied Physics Letters

Volumn 103, Issue 8, 2013, Pages

  Zhang, Junkai ^a   Liu, Cailong ^a   Zhang, Xin ^a   Ke, Feng ^a   Han, Yonghao ^a   Peng, Gang ^a   Ma, Yanzhang ^b   Gao, Chunxiao ^a  

^a JILIN UNIVERSITY   (China)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS TRANSPORT; CONDUCTION-BAND MINIMUM; ELECTRICAL TRANSPORT; FIRST-PRINCIPLES CALCULATION; HALL EFFECT MEASUREMENT; HIGH-PRESSURE PHASIS; SEMICONDUCTOR CONDUCTION; THEORETICAL APPROACH;

HIGH PRESSURE EFFECTS;

CALCULATIONS;

EID: 84883373470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4819160     Document Type: Article

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