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Volumn 103, Issue 8, 2013, Pages

Low voltage, high performance inkjet printed carbon nanotube transistors with solution processed ZrO2 gate insulator

(6) Kim, Bongjun a Jang, Seonpil a Prabhumirashi, Pradyumna L b Geier, Michael L b Hersam, Mark C b,c Dodabalapur, Ananth a

a The University of Texas at Austin (United States)

b Northwestern University (United States)

c NORTHWESTERN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE TRANSISTORS; INKJET PRINTING PROCESS; LOW OPERATING VOLTAGE; ON/OFF CURRENT RATIO; SINGLEWALLED CARBON NANOTUBE (SWCNT); THIN-FILM TRANSISTOR (TFTS); ULTRAVIOLET-OZONE TREATMENT; UNIFORM DISPERSIONS;

GATE DIELECTRICS; PRINTING; SCALABILITY; SINGLE-WALLED CARBON NANOTUBES (SWCN);

ZIRCONIUM ALLOYS;

EID: 84883348048 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4819465 Document Type: Article

Times cited : (46)

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