A study of SiGe HBT signal sources in the 220-330-GHz range

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 9, 2013, Pages 2011-2021

  Voinigescu, Sorin P ^a   Tomkins, Alexander ^a,b   Dacquay, Eric ^a   Chevalier, Pascal ^c   Hasch, Juergen ^d   Chantre, Alain ^c   Sautreuil, Bernard ^c  

^a UNIVERSITY OF TORONTO   (Canada)

^b Peraso Technologies   (Canada)

^c STMICROELECTRONICS   (France)

^d ROBERT BOSCH GMBH   (Germany)

Author keywords

Colpitts oscillator; Colpitts Clapp oscillator; Doubler; Push push VCO; Silicon germanium heterojunction bipolar transistors (SiGe HBTs); THz circuits; Voltage controlled oscillator (VCO)

Indexed keywords

COLPITTS OSCILLATORS; DOUBLERS; PUSH-PUSH VCO; SIGE HBTS; VOLTAGE-CONTROLLED-OSCILLATOR;

BUFFER AMPLIFIERS; EFFICIENCY; HETEROJUNCTION BIPOLAR TRANSISTORS; OPTIMIZATION; OSCILLISTORS; PHASE NOISE; TUNING;

VARIABLE FREQUENCY OSCILLATORS;

EID: 84883284721     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2265494     Document Type: Article

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