-
1
-
-
0000273683
-
Metal-insulator transition in vanadiumdioxide
-
Zylbersztejn, A. & Mott, N. F. Metal-insulator transition in vanadiumdioxide. Phys. Rev. B 11, 4383-4395 (1975).
-
(1975)
Phys. Rev. B
, vol.11
, pp. 4383-4395
-
-
Zylbersztejn, A.1
Mott, N.F.2
-
2
-
-
11244304990
-
Comment on 'VO2: Peierls orMott-Hubbard? A view from band theory'
-
Rice, T. M., Launois, H.& Pouget, J. P. Comment on 'VO2: Peierls orMott-Hubbard? A view from band theory'. Phys. Rev. Lett. 73, 3042 (1994).
-
(1994)
Phys. Rev. Lett
, vol.73
, pp. 3042
-
-
Rice, T.M.1
Launois, H.2
Pouget, J.P.3
-
3
-
-
18144426833
-
Dynamical singlets and correlation-assisted Peierls transition in VO2
-
Biermann, S., Poteryaev, A., Lichtenstein, A. I. & Georges, A. Dynamical singlets and correlation-assisted Peierls transition in VO2. Phys. Rev. Lett. 94, 026404 (2005).
-
(2005)
Phys. Rev. Lett
, vol.94
, pp. 026404
-
-
Biermann, S.1
Poteryaev, A.2
Lichtenstein, A.I.3
Georges, A.4
-
4
-
-
79961070800
-
VO2: A novel view from band theory
-
Eyert, V. VO2: a novel view from band theory. Phys. Rev. Lett. 107, 016401 (2011).
-
(2011)
Phys. Rev. Lett.
, vol.107
, pp. 016401
-
-
Eyert, V.1
-
5
-
-
33750516916
-
Strain-induced self organization of metal-insulator domains in single-crystalline VO2 nanobeams
-
Wu, J. Q. et al. Strain-induced self organization of metal-insulator domains in single-crystalline VO2 nanobeams. Nano Lett. 6, 2313-2317 (2006).
-
(2006)
Nano Lett
, vol.6
, pp. 2313-2317
-
-
Wu, J.Q.1
-
6
-
-
80051634711
-
Mechanics and dynamics of the strain-induced M1-M2 structural phase transition in individual VO2 nanowires
-
Guo, H. et al. Mechanics and dynamics of the strain-induced M1-M2 structural phase transition in individual VO2 nanowires. Nano Lett. 11, 3207-3213 (2011).
-
(2011)
Nano Lett
, vol.11
, pp. 3207-3213
-
-
Guo, H.1
-
7
-
-
84863039370
-
Strain and temperature dependence of the insulating phases of VO2 near the metal-insulator transition
-
Atkin, J. M. et al. Strain and temperature dependence of the insulating phases of VO2 near the metal-insulator transition. Phys. Rev. B 85, 020101(R) (2012).
-
(2012)
Phys. Rev. B
, vol.85
-
-
Atkin, J.M.1
-
8
-
-
71949095612
-
Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires
-
Sohn, J. I. et al. Surface-stress-induced Mott transition and nature of associated spatial phase transition in single crystalline VO2 nanowires. Nano Lett. 9, 3392-3397 (2009).
-
(2009)
Nano Lett
, vol.9
, pp. 3392-3397
-
-
Sohn, J.I.1
-
9
-
-
71949117029
-
Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam
-
Zhang, S. X., Chou, J. Y. & Lauhon, L. J. Direct correlation of structural domain formation with the metal insulator transition in a VO2 nanobeam. Nano Lett. 9, 4527-4532 (2009).
-
(2009)
Nano Lett
, vol.9
, pp. 4527-4532
-
-
Zhang, S.X.1
Chou, J.Y.2
Lauhon, L.J.3
-
10
-
-
78449274700
-
Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide
-
Tselev, A. et al. Symmetry relationship and strain-induced transitions between insulating M1 and M2 and metallic R phases of vanadium dioxide. Nano Lett. 10, 4409-4416 (2010).
-
(2010)
Nano Lett
, vol.10
, pp. 4409-4416
-
-
Tselev, A.1
-
11
-
-
77953319798
-
Interplay between ferroelastic and metal-insulator phase transitions in strained quasi-two-dimensional VO2 nanoplatelets
-
Tselev, A. et al. Interplay between ferroelastic and metal-insulator phase transitions in strained quasi-two-dimensional VO2 nanoplatelets. Nano Lett. 10, 2003-2011 (2010).
-
(2010)
Nano Lett
, vol.10
, pp. 2003-2011
-
-
Tselev, A.1
-
12
-
-
78651262637
-
Constant threshold resistivity in the metal-insulator transition of VO2
-
Cao, J. et al. Constant threshold resistivity in the metal-insulator transition of VO2. Phys. Rev. B 82, 241101(R) (2010).
-
(2010)
Phys. Rev. B
, vol.82
-
-
Cao, J.1
-
13
-
-
67651229259
-
New aspects of the metal-insulator transition in single-domain vanadiumdioxide nanobeams
-
Wei, J., Wang, Z. H., Chen, W. & Cobden, D. H. New aspects of the metal-insulator transition in single-domain vanadiumdioxide nanobeams. Nature Nanotechnol. 4, 420-424 (2009).
-
(2009)
Nature Nanotechnol
, vol.4
, pp. 420-424
-
-
Wei, J.1
Wang, Z.H.2
Chen, W.3
Cobden, D.H.4
-
14
-
-
84869090563
-
Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy
-
Kasirga, T. S. et al. Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy. Nature Nanotechnol. 7, 723-727 (2012).
-
(2012)
Nature Nanotechnol
, vol.7
, pp. 723-727
-
-
Kasirga, T.S.1
-
15
-
-
70449567721
-
Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadiumdioxide beams
-
Cao, J. et al. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadiumdioxide beams. Nature Nanotechnol. 4, 732-737 (2009).
-
(2009)
Nature Nanotechnol
, vol.4
, pp. 732-737
-
-
Cao, J.1
-
16
-
-
77955336129
-
Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram
-
Cao, J. et al. Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram. Nano Lett. 10, 2667-2673 (2010).
-
(2010)
Nano Lett
, vol.10
, pp. 2667-2673
-
-
Cao, J.1
-
17
-
-
0035476990
-
Martensitic accommodation strain and the metal-insulator transition in manganites
-
Podzorov, V., Kim, B. G., Kiryukhin, V., Gershenson, M. E.&Cheong, S. W.Martensitic accommodation strain and the metal-insulator transition in manganites. Phys. Rev. B 64, 140406(R) (2001).
-
(2001)
Phys. Rev. B
, vol.64
-
-
Podzorov, V.1
Kim, B.G.2
Kiryukhin, V.3
Gershenson, M.E.4
Cheong, S.W.5
-
18
-
-
84864859067
-
Divergent nematic susceptibility in an iron arsenide superconductor
-
Chu, J.-H., Kuo, H.-H., Analytis, J. G.&Fisher, I. R. Divergent nematic susceptibility in an iron arsenide superconductor. Science 337, 710-712 (2012).
-
(2012)
Science
, vol.337
, pp. 710-712
-
-
Chu, J.-H.1
Kuo, H.-H.2
Analytis, J.G.3
Fisher, I.R.4
-
19
-
-
0028515666
-
Femtosecond laser excitation of the semiconductor-metal phase transition in VO2
-
Becker, M. F., Buckman, A. B. & Walser, R. M. Femtosecond laser excitation of the semiconductor-metal phase transition in VO2. Appl. Phys. Lett. 65, 1507-1509 (1994).
-
(1994)
Appl. Phys. Lett
, vol.65
, pp. 1507-1509
-
-
Becker, M.F.1
Buckman, A.B.2
Walser, R.M.3
-
20
-
-
36649001396
-
Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide
-
Hilton, D. J. et al. Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide. Phys. Rev. Lett. 99, 226401 (2007).
-
(2007)
Phys. Rev. Lett
, vol.99
, pp. 226401
-
-
Hilton, D.J.1
-
21
-
-
34548767643
-
Coherent structural dynamics andelectronic correlationsduringan ultrafast insulator-to-metal phase transition in VO2
-
Kubler, C. et al. Coherent structural dynamics andelectronic correlationsduringan ultrafast insulator-to-metal phase transition in VO2. Phys. Rev. Lett. 99, 116401 (2007).
-
(2007)
Phys. Rev. Lett
, vol.99
, pp. 116401
-
-
Kubler, C.1
-
22
-
-
37349052805
-
Mott transition inVO2 revealed by infrared spectroscopy and nano-imaging
-
Qazilbash, M. M. et al.Mott transition inVO2 revealed by infrared spectroscopy and nano-imaging. Science 318, 1750-1753 (2007).
-
(2007)
Science
, vol.318
, pp. 1750-1753
-
-
Qazilbash, M.M.1
-
23
-
-
77952347227
-
Nano-optical investigations of the metal-insulator phase behavior of individual VO2 microcrystals
-
Jones, A. C., Berweger, S., Wei, J., Cobden, D. & Raschke, M. B. Nano-optical investigations of the metal-insulator phase behavior of individual VO2 microcrystals. Nano Lett. 10, 1574-1581 (2010).
-
(2010)
Nano Lett
, vol.10
, pp. 1574-1581
-
-
Jones, A.C.1
Berweger, S.2
Wei, J.3
Cobden, D.4
Raschke, M.B.5
-
24
-
-
84864246045
-
Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
-
Nakano, M. et al. Collective bulk carrier delocalization driven by electrostatic surface charge accumulation. Nature 487, 459-462 (2012).
-
(2012)
Nature
, vol.487
, pp. 459-462
-
-
Nakano, M.1
-
25
-
-
84875441442
-
Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation
-
Jeong, J. et al. Suppression of metal-insulator transition in VO2 by electric field-induced oxygen vacancy formation. Science 339, 1402-1405 (2013).
-
(2013)
Science
, vol.339
, pp. 1402-1405
-
-
Jeong, J.1
-
26
-
-
84863726508
-
Hydrogenstabilizationof metallic vanadium dioxide in single-crystal nanobeams
-
Wei, J., Ji, H.,Guo,W. H.,Nevidomskyy, A. H.&Natelson, D.Hydrogenstabilizationof metallic vanadium dioxide in single-crystal nanobeams. Nature Nanotechnol. 7, 357-362 (2012).
-
(2012)
Nature Nanotechnol
, vol.7
, pp. 357-362
-
-
Wei, J.1
Ji, H.2
Guo, W.H.3
Nevidomskyy, A.H.4
Natelson, D.5
-
27
-
-
0001530003
-
Electron localization induced by uniaxial stress in pure VO2
-
Pouget, J. P., Launois, H., Dhaenens, J. P., Merenda, P. & Rice, T. M. Electron localization induced by uniaxial stress in pure VO2. Phys. Rev. Lett. 35, 873-875 (1975).
-
(1975)
Phys. Rev. Lett
, vol.35
, pp. 873-875
-
-
Pouget, J.P.1
Launois, H.2
Dhaenens, J.P.3
Merenda, P.4
Rice, T.M.5
-
28
-
-
0001719199
-
Structural aspects ofmetal-insulator transitions in Cr-doped VO2
-
Marezio, M.,McWhan, B.,Dernier, P. D.&Remeika, J. P.Structural aspects ofmetal-insulator transitions in Cr-doped VO2. Phys. Rev. B 5, 2541-2551 (1972).
-
(1972)
Phys. Rev. B
, vol.5
, pp. 2541-2551
-
-
Marezio, M.1
McWhan, B.2
Dernier, P.D.3
Remeika, J.P.4
-
29
-
-
0000953608
-
Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO2 near the transition temperature
-
Kucharczyk, D. & Niklewski, T. Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO2 near the transition temperature. J. Appl. Crystallogr. 12, 370-373 (1979).
-
(1979)
J. Appl. Crystallogr
, vol.12
, pp. 370-373
-
-
Kucharczyk, D.1
Niklewski, T.2
-
30
-
-
36049057708
-
Electronic properties of VO2 near the semiconductor-metal transition
-
Berglund, C. N. & Guggenheim, H. J. Electronic properties of VO2 near the semiconductor-metal transition. Phys. Rev. 185, 1022-1033 (1969).
-
(1969)
Phys. Rev
, vol.185
, pp. 1022-1033
-
-
Berglund, C.N.1
Guggenheim, H.J.2
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