Radiation performance of Ge technologies

Germanium-Based Technologies

Volumn , Issue , 2007, Pages 211-232

  Markevich, Vladimir ^a   Peaker, Anthony R ^a   Nylandsted Larsen, Arne ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ION IMPLANTATION; METALS; MOS DEVICES; OXIDE SEMICONDUCTORS; RADIATION DAMAGE;

ANNEALING BEHAVIOR; DEVICE PERFORMANCE; DISPLACEMENT DAMAGES; GERMANIUM DEVICES; METAL OXIDE SEMICONDUCTOR; RADIATION INDUCED DEFECTS; RADIATION PERFORMANCE; SILICON TECHNOLOGIES;

NEUTRON IRRADIATION;

EID: 84882484083     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-008044953-1/50011-9     Document Type: Chapter

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