35 nm mHEMT Technology for THz and ultra low noise applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2013, Pages

  Leuther, Arnulf ^a   Tessmann, Axel ^a   Dammann, Michael ^a   Massler, Hermann ^a   Schlechtweg, Michael ^a   Ambacher, Oliver ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATED LIFETIME TESTS; CHANNEL TEMPERATURE; DEGRADATION FAILURE; MEDIAN TIME TO FAILURES; METAMORPHIC HIGH-ELECTRON MOBILITY TRANSISTORS; TERAHERTZ MONOLITHIC INTEGRATED CIRCUIT (TMIC); TRANSISTOR RELIABILITY; ULTRA LOW-NOISE APPLICATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

AMPLIFIERS (ELECTRONIC);

EID: 84882335896     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2013.6562647     Document Type: Conference Paper

References (4)

1. William Deal, X. B. Mei, Kevin M. K. H. Leong, Vesna Radisic, S. Sarkozy, and Richard Lai, "THz Monolithic Integrated Circuits Using InP High Electron Mobility Transistors", IEEE Tans. Terahertz Science and Technology, vol. 1, no. 1, p. 25, September
2. A. Leuther, A. Tessmann, H. Massler, R. Lösch, M. Schlechtweg, M. Mikulla, O. Ambacher, "35 nm Metamorphic HEMT MMIC Technology", 20th International Conference on Indium Phosphide and Related Materials, MoA3.3, May 2008.
3. A. Tessmann, A. Leuther, H. Massler, M. Seelmann-Eggebert", A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology", IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, pp. 14-17
4. Vesna Radisic, Kevin M. K. H. Leong, Stephen Sarkozy, Xiaobing Mei, Wayne Yoshida, Po-Hsin Liu, William R. Deal, Richard Lai, "220 GHz Solid-State Power Amplifier Modules", IEEE J. Solid-State Circuits, vol. 47, no. 10, 2012, pp. 2291-229