Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing

Journal of Crystal Growth

Volumn 365, Issue , 2013, Pages 29-34

  Chen, Robert ^a   Huang, Yi Chiau ^b   Gupta, Suyog ^a   Lin, Angie C ^a   Sanchez, Errol ^b   Kim, Yihwan ^b   Saraswat, Krishna C ^a   Kamins, Theodore I ^a   Harris, James S ^a  

^a Stanford University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

A1. Photoluminescence; A1. Segregation; A3. Chemical vapor deposition; B1. Alloys; B2. GeSn; B2. Semiconducting germanium

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DEPOSITION; GERMANIUM; HEAT TREATMENT; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GERMANIUM; SURFACE SEGREGATION; VAPOR DEPOSITION;

B2. GESN; CAVITY RESONANCES; CRITICAL TEMPERATURES; LUMINESCENCE STUDIES; MATERIAL CHARACTERIZATIONS; PL INTENSITY; REDUCED PRESSURE CHEMICAL VAPOR DEPOSITION; SMOOTH SURFACE;

TIN;

EID: 84881565385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.12.014     Document Type: Article

References (14)

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