Improving and optimizing reliability in future technologies with high-κ dielectrics

2013 International Symposium on VLSI Design, Automation, and Test, VLSI-DAT 2013

Volumn , Issue , 2013, Pages

  Linder, Barry P ^a   Cartier, E ^a   Krishnan, S ^a   Wu, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS TEMPERATURE INSTABILITY; CIRCUIT OPERATION; FUTURE TECHNOLOGIES; GATE OXIDE; RING OSCILLATOR STRUCTURES;

GATE DIELECTRICS;

INTEGRATED CIRCUITS;

EID: 84881351567     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLDI-DAT.2013.6533828     Document Type: Conference Paper

References (9)

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2. A. Kerber, et. al., Electron Device Letters 30.12, pp. 1347-1349 (2009).
3. S. Krishnan, 2011 Electron Devices Meeting (IEDM), pp. 28.1.1-28.1.4 (2011).
4. J. Franco, et. al., Microelectronic Engineering 88.7, pp. 1388-1391 (2011).
5. B. P. Linder, et. al., 2009 IEEE Reliability Physics Symposium, pp. 510-513 (2009).
6. M. Wang, et. al., submitted to Electron Device Letters.
7. E. Wu, et. al. 2012 Electron Devices Meeting (IEDM), pp. 653-656 (2012).
8. B. P. Linder, et. al., IEEE Integrated Reliability Workshop (IRW), pp. 1-6 (2011).
9. J. Kim, et. al., 2011 IEEE Reliability Physics Symposium, pp. 47-50 (2011).