Dark current and white blemish in image sensors

2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Volumn , Issue , 2013, Pages

  Teranishi, Nobukazu ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS METHOD; GETTERING; SENSOR DEVELOPMENT;

IMAGE SENSORS;

EID: 84881185840     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSI-TSA.2013.6545639     Document Type: Conference Paper

References (13)

1. N. Teranishi et al., "No Image Lag Photodiode Structure in the Interline CCD Image Sensor", IEEE IEDM, pp.324-327, 1982.
2. R. D. McGrath et al., "Counting of Deep-Level Traps Using a Charge-Coupled Device", IEEE Trans. Electron Devices, vol. ED-34, no. 12, pp. 2555-2557, 1987.
3. E. Sirtl and A. Adler, "Chromic Acid-Hydrofluoric Acid as Specific Reagents for the Development of Etching Pits in Silicon", Z. Metallkd., vol. 52, p.529-531,1961.
4. F.. Secco d'Aragona, "Dislocation Etch for (100) Planes in Silicon", J. Electrochem. Soc., vol.119, pp.948-951, 1972.
5. M. Wright Jenkins, "New Preferential Etch for Defects in Silicon Crystals" J. Electrochem. Soc., vol.124, pp.757-759, 1977.
6. A. Goetzberger and W. Shockley, "Metal Precipitates in silicon p-n Junctions", J. appl. Phys., vol.31, pp. 1821-1824, 1960.
7. G. H. Schwuttke, "Study of Copper Precipitation Behavior in Silicon Single Crystals", J. Electrochem. Soc., vol. 108, pp. 163-167, 1961.
8. G. A. Rozgonyi et al., "Elimination of Oxidation-Induced Stacking Faults by Preoxidation Gettering of Silicon Wafers I. Phosphorus Diffusion-Induced Misfit dislocations", J. Electrochem. Soc., vol. 122, pp. 1725-1729, 1975.
9. H. Tsuya, "Application of Intrinsic Gettering Using Multistep Heat Treatment Technique to Silicon LSI Devices", Europhys. Conf. Abst. ESSDERC, F7, pp. 150-151, 1983.
10. Y. Niki et al., "Iron Gettering by High Energy Ion Implantation", Defect Control in Semiconductors, North-Holland, pp. 329-334, 1990.
11. S. M. Sze, Physics of Semiconductor Devices 2nd edition. John Wiley & Sons, 1981, ch. 1, p. 37, Eq. 59 and ch. 2, pp. 87-89.
12. K. Itonaga, " Extremely-Low-Noise CMOS Image Sensor with High Saturation Capacity", IEEE IEDM, 8.1, pp.171-174, 2011.
13. R. Kuroda, et al., " Highly Ultraviolet Light Sensitive and Highly Reliable Photodiode with Atomically Flat Si Surface", International Image Sensors Workshop, Hakodate-Onuma, Japan, R11, June 2011.