Accounting for dose-enhancement effects with CMOS transistors

IEEE Transactions on Nuclear Science

Volumn 32, Issue 6, 1985, Pages 4369-4375

  Fleetwood, D M ^a   Winokur, P S ^a   Beegle, R W ^a   Dressendorfer, P V ^a   Draper, B L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84881147810     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1985.4334126     Document Type: Article

References (21)

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12. See, for example, H. E. Boesch, Jr. and J. M. McGarrity, IEEE Trans. Nuc. Sci. NS-23, 1520 (1976).
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21. The 0.1 Mrad values for VGs = -10 V are below the sensitivity “floor” of the measurement, AV _ 50 mV. All other values are accurate to to within at least 10 percent.