Cu-Sn transient liquid phase wafer bonding: Process parameters influence on bonded interface quality

ECS Transactions

Volumn 50, Issue 7, 2013, Pages 177-188

  Flotgen C ^a   Corn, K ^b   Pawlak, M ^a   Van De Wiel, Hj ^c   Hayes, G R ^c   Dragoi, V ^a  

^a EV GROUP   (Austria)

^b EV Group Inc   (United States)

^c TNO   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; COPPER ALLOYS; SILICON WAFERS; TIN ALLOYS; VACUUM APPLICATIONS;

BONDED INTERFACE; BONDING TEMPERATURES; LAYER TRANSFORMATION; PROCESS PARAMETERS; TRANSIENT LIQUID PHASE; VACUUM SEALING; WAFER LEVEL BONDINGS; WAFER STACKING TECHNOLOGY;

WAFER BONDING;

EID: 84881142289     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05007.0177ecst     Document Type: Conference Paper

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