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Volumn 35, Issue 10, 2013, Pages 1776-1782

Systematic analysis of the spectroscopic characteristics of 3d ions in a free state and some cubic crystals

Author keywords

3d ions; Crystal field parameters; Nephelauxetic effect; Racah parameters

Indexed keywords

ALUMINUM ARSENIDE; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; IONS; SEMICONDUCTING GALLIUM; SPECTROSCOPIC ANALYSIS; YTTRIUM ALUMINUM GARNET;

EID: 84880923110     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2013.02.022     Document Type: Conference Paper
Times cited : (16)

References (18)
  • 15
    • 84880924438 scopus 로고
    • Analysis of the Internal Optical Spectra of Triply Ionized Transition-Metal Ions in III-V Semiconductors
    • LA, USA, 15-20
    • C.A. Morrison, D.E. Wortman, Analysis of the Internal Optical Spectra of Triply Ionized Transition-Metal Ions in III-V Semiconductors, in: Proceedings of AAAS Annual Meeting, New Orleans, LA, USA, 15-20, 1990.
    • (1990) Proceedings of AAAS Annual Meeting, New Orleans
    • Morrison, C.A.1    Wortman, D.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.