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Volumn 48, Issue 8, 2013, Pages 1954-1962

An energy efficient 32-nm 20-MB shared on-die L3 cache for Intel® Xeon® processor E5 family

Author keywords

Circuit design; Clock; Low Vccmin; On die cache; Power reduction; Redundancy design; SRAM

Indexed keywords

CIRCUIT DESIGNS; LOW VCCMIN; ON-DIE CACHE; POWER REDUCTIONS; REDUNDANCY DESIGN;

EID: 84880917346     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2258815     Document Type: Article
Times cited : (28)

References (7)
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  • 2
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  • 3
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    • Feb
    • Y. Wang et al., "A 4.0 GHz 291 Mb voltage-scalable SRAM design in 32 nm high-K metal-gate CMOS with integrated power management," in Proc. IEEE ISSCC Dig. Tech. Papers, Feb. 2009, pp. 456-457.
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  • 4
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  • 7
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    • An energy efficient 32 nm20MBL3 cache for Intel® Xeon® processor E5 family
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    • M. Huang et al., "An energy efficient 32 nm20MBL3 cache for Intel® Xeon® processor E5 family," presented at the IEEE CICC, Sep. 2012.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.