-
1
-
-
54949147274
-
-
10.1002/cvde.200606517
-
N. Bahlawane, P. A. Premkumar, J. Feldmann, and K. Kohse-Hoinghaus, Chem. Vap. Deposition 13, 118 (2007). 10.1002/cvde.200606517
-
(2007)
Chem. Vap. Deposition
, vol.13
, pp. 118
-
-
Bahlawane, N.1
Premkumar, P.A.2
Feldmann, J.3
Kohse-Hoinghaus, K.4
-
2
-
-
0035507098
-
-
10.1016/S0040-6090(01)01302-5
-
C. F. Windisch, G. J. Exarhos, K. F. Ferris, M. H. Engelhard, and D. C. Stewart, Thin Solid Films 398, 45 (2001). 10.1016/S0040-6090(01)01302-5
-
(2001)
Thin Solid Films
, vol.398
, pp. 45
-
-
Windisch, C.F.1
Exarhos, G.J.2
Ferris, K.F.3
Engelhard, M.H.4
Stewart, D.C.5
-
3
-
-
0035796942
-
-
10.1016/S0040-6090(01)00965-8
-
D. P. Lapham, I. Colbeck, J. Schoonman, and Y. Kamlag, Thin Solid Films 391, 17 (2001). 10.1016/S0040-6090(01)00965-8
-
(2001)
Thin Solid Films
, vol.391
, pp. 17
-
-
Lapham, D.P.1
Colbeck, I.2
Schoonman, J.3
Kamlag, Y.4
-
4
-
-
0035668160
-
-
10.1039/b103135j
-
J. F. Marco, J. R. Gancedo, M. Gracia, J. L. Gautier, E. I. Rios, H. M. Palmer, C. Greaves, and F. J. Berry, J. Mater. Chem. 11, 3087 (2001). 10.1039/b103135j
-
(2001)
J. Mater. Chem.
, vol.11
, pp. 3087
-
-
Marco, J.F.1
Gancedo, J.R.2
Gracia, M.3
Gautier, J.L.4
Rios, E.I.5
Palmer, H.M.6
Greaves, C.7
Berry, F.J.8
-
7
-
-
0030573304
-
-
10.1016/0022-0728(95)04254-7
-
P. Nkeng, J.-F. Koenig, J. L. Gautier, P. Chartier, and G. Poillerat, J. Electroanal. Chem. 402, 81 (1996). 10.1016/0022-0728(95)04254-7
-
(1996)
J. Electroanal. Chem.
, vol.402
, pp. 81
-
-
Nkeng, P.1
Koenig, J.-F.2
Gautier, J.L.3
Chartier, P.4
Poillerat, G.5
-
10
-
-
77953641533
-
-
M. Hamdani, R. N. Singh, and P. Chartier, Int. J. Electrochem. Sci. 5, 556 (2010), available at http://www.electrochemsci.org/papers/vol5/5040556.pdf.
-
(2010)
Int. J. Electrochem. Sci.
, vol.5
, pp. 556
-
-
Hamdani, M.1
Singh, R.N.2
Chartier, P.3
-
11
-
-
0036499391
-
-
10.1016/S0013-4686(01)00897-0
-
V. Rashkova, S. Kitova, I. Konstantinov, and T. Vitanov, Electrochim. Acta 47, 1555 (2002). 10.1016/S0013-4686(01)00897-0
-
(2002)
Electrochim. Acta
, vol.47
, pp. 1555
-
-
Rashkova, V.1
Kitova, S.2
Konstantinov, I.3
Vitanov, T.4
-
12
-
-
84863037674
-
-
10.1063/1.3676439
-
P. Silwal, L. Miao, I. Stern, X. Zhou, J. Hu, and D. H. Kim, Appl. Phys. Lett. 100, 032102 (2012). 10.1063/1.3676439
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 032102
-
-
Silwal, P.1
Miao, L.2
Stern, I.3
Zhou, X.4
Hu, J.5
Kim, D.H.6
-
13
-
-
0034063663
-
-
10.1016/S0968-4328(99)00139-0
-
Z. L. Wang, J. S. Yin, and Y. D. Jiang, Micron 31, 571 (2000). 10.1016/S0968-4328(99)00139-0
-
(2000)
Micron
, vol.31
, pp. 571
-
-
Wang, Z.L.1
Yin, J.S.2
Jiang, Y.D.3
-
14
-
-
0001690043
-
-
10.1103/PhysRevB.34.1467
-
W. G. Waddington, P. Rez, I. P. Grant, and C. J. Humphreys, Phys. Rev. B 34, 1467 (1986). 10.1103/PhysRevB.34.1467
-
(1986)
Phys. Rev. B
, vol.34
, pp. 1467
-
-
Waddington, W.G.1
Rez, P.2
Grant, I.P.3
Humphreys, C.J.4
-
15
-
-
77956532463
-
-
10.1103/PhysRevB.82.024104
-
V. G. Ivanov, M. V. Abrashev, M. N. Iliev, M. M. Gospodinov, J. Meen, and M. I. Aroyo, Phys. Rev. B 82, 024104 (2010). 10.1103/PhysRevB.82.024104
-
(2010)
Phys. Rev. B
, vol.82
, pp. 024104
-
-
Ivanov, V.G.1
Abrashev, M.V.2
Iliev, M.N.3
Gospodinov, M.M.4
Meen, J.5
Aroyo, M.I.6
-
16
-
-
79551538955
-
-
10.1103/PhysRevB.83.014108
-
M. N. Iliev, D. Mazumdar, J. X. Ma, A. Gupta, F. Rigato, and J. Fontcuberta, Phys. Rev. B 83, 014108 (2011). 10.1103/PhysRevB.83.014108
-
(2011)
Phys. Rev. B
, vol.83
, pp. 014108
-
-
Iliev, M.N.1
Mazumdar, D.2
Ma, J.X.3
Gupta, A.4
Rigato, F.5
Fontcuberta, J.6
-
19
-
-
84867535133
-
-
10.1002/adfm.201200257
-
M. Foerster, M. Iliev, N. Dix, X. Marti, M. Barchuk, F. Sanchez, and J. Fontcuberta, Adv. Funct. Mater. 22, 4344 (2012). 10.1002/adfm.201200257
-
(2012)
Adv. Funct. Mater.
, vol.22
, pp. 4344
-
-
Foerster, M.1
Iliev, M.2
Dix, N.3
Marti, X.4
Barchuk, M.5
Sanchez, F.6
Fontcuberta, J.7
-
20
-
-
0842301335
-
-
10.1023/B:JMSC.0000007751.14703.4b
-
D. P. Lapham and A. C. C. Tseung, J. Mater. Sci. 39, 251 (2004). 10.1023/B:JMSC.0000007751.14703.4b
-
(2004)
J. Mater. Sci.
, vol.39
, pp. 251
-
-
Lapham, D.P.1
Tseung, A.C.C.2
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