Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 145-146

  Najmzadeh, Mohammad ^a   Bouvet, Didier ^a   Grabinski, Wladek ^a   Ionescu, Adrian M ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION MODES; ELECTRICAL CHARACTERISTIC; EXPERIMENTAL STUDIES; GATE-ALL-AROUND; ROOM TEMPERATURE; SI NANOWIRE; SILICON NANOWIRES; UNIAXIAL TENSILE STRAIN;

ELECTRIC BREAKDOWN; NANOWIRES;

MOSFET DEVICES;

EID: 84880761081     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994458     Document Type: Conference Paper

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