60 nm gate length Al2O3 / In0.53Ga 0.47As gate-first MOSFETs using InAs raised source-drain regrowth

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2011, Pages 19-20

  Carter, Andrew D ^a   Law, J J M ^a   Lobisser, E ^a   Burek, G J ^a   Mitchell, W J ^a   Thibeault, B J ^a   Gossard, A C ^a   Rodwell, M J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS RESISTANCE; CONTACTED GATE PITCH; DIELECTRIC INTERFACE; EFFECTIVE OXIDE THICKNESS; FULLY SELF-ALIGNED; ON STATE CURRENT; SHORT-CHANNEL EFFECT; SOURCE-DRAIN REGROWTHS;

DIELECTRIC MATERIALS; GALLIUM; INTERFACE STATES;

MOSFET DEVICES;

EID: 84880747631     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2011.5994402     Document Type: Conference Paper

References (9)

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9. G. Burek , et alsubmitted to Applied Physics Letters