Electronic structure of the layer compounds GaSe and InSe in a tight-binding approach

Physical Review B - Condensed Matter and Materials Physics

Volumn 65, Issue 12, 2002, Pages 1-12

  Camara, M O D ^a   Mauger, A ^a   Devos, I ^b  

^a Lab Milieux Desordonnes/Heterogenes   (France)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84880442164     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.65.125206     Document Type: Article

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