Half-heusler (TiZrHf)NiSn unileg module with high powder density

Materials

Volumn 6, Issue 4, 2013, Pages 1326-1332

  Populoh, Sascha ^a   Brunko, Oliver C ^a   Galła̧zka, Krzysztof ^a   Xie, Wenjie ^a   Weidenkaff, Anke ^a  

^a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY   (Switzerland)

Author keywords

Half Heusler compounds; Thermoelectric modules; Thermoelectricity

Indexed keywords

FIGURE OF MERITS; HALF-HEUSLER COMPOUND; MEASUREMENT STAND; POWDER DENSITY; TEMPERATURE RANGE; THERMO-ELECTRIC MODULES; THERMOELECTRIC PROPERTIES; VOLUMETRIC POWER DENSITY;

EQUIVALENT CIRCUITS;

THERMOELECTRICITY;

EID: 84880109179     PISSN: None     EISSN: 19961944     Source Type: Journal    
DOI: 10.3390/ma6041326     Document Type: Article

References (20)

1. Terasaki, I.; Sasago, Y.; Uchinokura, K. Large thermoelectric power in NaCo2O4 single crystals. Phys. Rev. B 1997, 56, R12685-R12687.
2. Wang, Y.; Rogado, N.S.; Cava, R.J.; Ong, N.P. Spin entropy as the likely source of enhanced thermopower in Na(x)Co2O4. Nature 2003, 423, 425-428.
3. Populoh, S.; Auban-Senzier, P.; Wzietek, P.; Pasquier, C.R. The power factor of Cr-doped V2O3 near the Mott transition. Appl. Phys. Lett. 2011, 99, 171902-171904.
4. Graf, T.; Felser, C.; Parkin, S.S.P. Simple rules for the understanding of Heusler compounds. Prog. Solid State Chem. 2011, 39, 1-50.
5. Aliev, F.G.; Kozyrkov, V.V.; Moshchalkov, V.V.; Skolozdra, R.V.; Durczewski, K. Narrow band in the intermetallic compounds MNiSn (M = Ti, Zr, Hf). Z. Phys. B Condens. Matter 1990, 80, 353-357.
6. Hohl, H.; Ramirez, A.; Kaefer, W.; Fess, K.; Thurner, C.; Kloc, C.; Bucher, E. A new class of materials with promising thermoelectric properties: MNiSn (M = Ti, Zr, Hf). Mater. Res. Soc. Symp. Proc. 1997, 478, 109-114.
7. Uher, C.; Yang, J.; Hu, S.; Morelli, D.T.; Meisner, G.P. Transport properties of pure and doped MNiSn (M = Zr, Hf). Phys. Rev. B 1999, 59, 8615-8621.
8. Sakurada, S.; Shutoh, N. Effect of Ti substitution on the thermoelectric properties of (Zr,Hf)NiSn half-Heusler compounds. Appl. Phys. Lett. 2005, 86, 082105:1-082105:3.
9. Culp, S.R.; Poon, S.J.; Hickman, N.; Tritt, T.M.; Blumm, J. Effect of substitutions on the thermoelectric figure of merit of half-Heusler phases at 800 °C. Appl. Phys. Lett. 2006, 88, 042106:1-042106:3.
10. Culp, S.R.; Simonson, J.W.; Poon, S.J.; Ponnambalam, V.; Edwards, J.; Tritt, T.M. (Zr,Hf)Co(Sb,Sn) half-Heusler phases as high-temperature (>700 °C) p-type thermoelectric materials. Appl. Phys. Lett. 2008, 93, 022105:1-022105:3.
11. Xie, W.J.; Jin, Q.; Tang, X. The preparation and thermoelectric properties of Ti0.5Zr0.25Hf0.25Co1-xNixSb half-Heusler compounds. J. Appl. Phys. 2008, 103, 043711:1-043711:5.
12. Xie, W.J.; He, J.; Zhu, S.; Su, X.L.; Wang, S.Y.; Holgate, T.; Graff, J.W.; Ponnambalam, V.; Poon, S.J.; Tang, X.F.; Zhang, Q.J.; Tritt, T.M. Simultaneously optimizing the independent thermoelectric properties in (Ti,Zr,Hf)(Co,Ni)Sb alloy by in situ forming InSb nanoinclusions. Acta Mater. 2010, 58, 4705-4713.
13. Yan, X.; Joshi, G.; Liu, W.; Lan, Y.; Wang, H.; Lee, S.; Simonson, J.W.; Poon, S.J.; Tritt, T.M.; Chen, G.; Ren, Z.F. Enhanced thermoelectric figure of merit of p-type Half-Heuslers. Nano Lett. 2011, 11, 556-560.
14. Populoh, S.; Aguirre, M.H.; Brunko, O.C.; Galazka, K.; Lu, Y.; Weidenkaff, A. High figure of merit in (Ti,Zr,Hf)NiSn half-Heusler alloys. Scripta Mater. 2012, 66, 1073-1076.
15. Poon, S.J.; Wu, D.; Zhu, S.; Xie, W.J.; Tritt, T.M.; Thomas, P.; Venkatasubramanian, R. Half-Heusler phases and nanocomposites as emerging high-ZT thermoelectric materials. J. Mater. Res. 2011, 26, 2795-2802.
16. Mikami, M.; Kobayashi, K.; Kawada, T.; Kubo, K.; Uchiyama, N. Development of a thermoelectric module using the heusler alloy Fe2VAl. J. Electron. Mater. 2009, 38, 1121-1126.
17. Mikami, M.; Kobayashi, K.; Tanaka, S. Power generation performance of thermoelectric module consisting of Sb-doped Heusler Fe2VAl sintered alloy. Mater. Trans. 2011, 52, 1546-1548.
18. Lemonnier, S.; Goupil, C.; Noudem, J.; Guilmeau, E. Four-leg Ca0.95Sm0.05MnO3 unileg thermoelectric device. J. Appl. Phys. 2008, 104, 014505:1-014505:4.
19. Funahashi, R.; Urata, S.; Mizuno, K.; Kouuchi, T.; Mikami, M. Ca2.7Bi0.3Co4O9/La0.9Bi0.1NiO3 thermoelectric devices with high output power density. Appl. Phys. Lett. 2004, 85, 1036-1038.
20. Tomeš, P.; Trottmann, M.; Suter, C.; Aguirre, M.H.; Steinfeld, A.; Haueter, P.; Weidenkaff, A. Thermoelectric oxide modules (TOMs) for the direct conversion of simulated solar radiation into electrical energy. Materials 2010, 3, 2801-2814.