SOI current and voltage reference sources for applications up to 300°C

1998 4th International High Temperature Electronics Conference, HITEC 1998

Volumn , Issue , 1998, Pages 55-59

  Eggermont, J P ^a   Dessard, V ^b   Vandooren, A ^b   Flandre, D ^b   Colinge, J P ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ON INSULATOR TECHNOLOGY; VOLTAGE MEASUREMENT;

FULLY DEPLETED SOI; REFERENCE SOURCE; TEMPERATURE COEFFICIENT; VOLTAGE REFERENCE; WIDE TEMPERATURE RANGES;

TEMPERATURE;

EID: 84880050572     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/HITEC.1998.676761     Document Type: Conference Paper

References (6)

1. D. Flandre, "Silicon-On-Insulator Technology for High Temperature Metal Oxide Semiconductor Devices and Circuits", Materials Sciences and Engineering B29, pp. 7-12, 1995.
2. J. P. Eggermont, D. De Ceuster, D. Flandre, B. Gentinne, P. Jespers, J. P. Colinge, "Design of SOI CMOS Operational Amplifiers for applications up to 300°C", IEEE JSSC, vol. 31, no 2, pp. 179-186, February, 1996.
3. H. J. Song, C. K. Kim, "A Temperature-Stabilized SOI Voltage Reference Based on Threshold Voltage Difference Between Enhancement and Depletion n-MOSFETs", TEEE JSSC, vol. 28, no6, pp. 671-677, June, 1993.
4. C. Eisenhut, J. W. Klein, "SIMOX Voltage and Current References for applications up to 300°C", in Proc. Third International High Temperature Electronics Conf., Albuquerque, NM, pp. XI 27-31, June 9-14, 1996.
5. J. P. Eggermont, V. Dessard, A. Vandooren, D. Flandre, J. P. Colinge, "SO1 Current and Voltage Reference Sources for applications up to 300°C", HITEN '97 Conf., Manchester, England, 14-17 September, 1997.
6. H. J. Oguey, B. Gerber, "MOS Voltage Reference Based on Polysilicon Gate Work Function Difference", IEEE JSSC, vol. 15, no 3, pp. 264-269, June, 1980.