Hole mobility enhancement in compressively strained Ge0.93 Sn0.07 pMOSFETs

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 831-833

  Gupta, Suyog ^a   Huang, Yi Chiau ^b   Kim, Yihwan ^b   Sanchez, Errol ^b   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

Germanium tin (GeSn); hole mobility; pMOSFET

Indexed keywords

BIAXIAL COMPRESSIVE STRAIN; GERMANIUM TINS; INVERSION CHARGE DENSITY; LOW THERMAL BUDGET; MOBILITY ENHANCEMENT; P-MOSFETS; PMOSFET; STRAINED-GE;

EPITAXIAL GROWTH; HOLE MOBILITY; MOSFET DEVICES; TIN;

GERMANIUM;

EID: 84880050235     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2259573     Document Type: Article

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