Dual-gate (FinFET) and tri-gate MOSFETs: Simulation and design

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

Volumn , Issue , 2003, Pages 150-151

  Breed, A ^a   Roenker, K P ^a  

^a University of Cincinnati   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT DESIGN; INTEGRATED CIRCUITS; SEMICONDUCTOR DEVICES;

DEVICE DESIGN; INTEGRATED CIRCUIT APPLICATIONS; MOSFET STRUCTURES; NANO METER RANGE; NUMERICAL SIMULATORS; SILICON INTEGRATED CIRCUITS; SILICON MOSFET; TRI-GATE TRANSISTORS;

MOSFET DEVICES;

EID: 84879935139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2003.1272037     Document Type: Conference Paper

References (3)

1. D. Hisamoto, W-C. Lee, J. Kedzierski and C. Hu, IEEE Trans. Elecrr. Dev., vol. 47, pp. 2320-2325 (December 2000).
2. B. Doyle, B. Boyanov, S. Datta, M. Doczy and R. Chau, Tech. Dig. Symp. VLSI Technol., pp. 133-134 (2003).
3. ATLAS, Silvaco International, Santa Clara, CA, 2001.