Formation of Ge and GeSi nanocrystals in GeOx/SiO2 multilayers

Journal of Physics D: Applied Physics

Volumn 46, Issue 27, 2013, Pages

  Volodin, V A ^a,b   Marin, D V ^a,b   Rinnert, H ^c   Vergnat, M ^c  

^a ENERGY SYSTEMS INSTITUTE   (Russian Federation)

^b NOVOSIBIRSK STATE UNIVERSITY   (Russian Federation)

^c INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; COMPARATIVE ANALYSIS; EVOLUTION OF STRUCTURES; LAYER THICKNESS; MULTILAYER STRUCTURES; NANO-STRUCTURED; NANOCRYSTAL (NCS); SI SUBSTRATES;

AMORPHOUS FILMS; AMORPHOUS SILICON; GERMANIUM; NANOCRYSTALS;

MULTILAYERS;

EID: 84879910718     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/27/275305     Document Type: Article

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