Electronic structure of substitutional group-1B impurities in β-Silicon carbide

Chemical Physics Letters

Volumn 578, Issue , 2013, Pages 59-65

  Tablero, C ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION EFFECT; CUBIC-SIC; IMPURITIES IN; INTERMEDIATE BANDS; MAIN EFFECT; OPTOELECTRONIC PROPERTIES;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP;

SILICON CARBIDE;

EID: 84879908189     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2013.05.065     Document Type: Article

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