Si surface preparation and passivation by vapor phase of heavy water

16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008

Volumn , Issue , 2008, Pages 219-228

  Edit Pap, Andrea ^a   Petrik, Peter ^a   Pecz, Bela ^a   Battistig, Gabor ^a   Barsony, Istvan ^a   Szekrenyes, Zsolt ^b   Kamaras, Katalin ^b   Schay, Zoltan ^b   Nenyei, Zsolt ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c Mattson Thermal Products GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SURFACES; DESORPTION KINETICS; INTERFACE ENGINEERING; NATIVE OXIDES; PASSIVATION PROCESS; ROOM TEMPERATURE; SURFACE EVOLUTION; VAPOR-PHASE TREATMENT;

ATOMIC FORCE MICROSCOPY; DEUTERIUM; HEAVY WATER; LIGHT ABSORPTION; PASSIVATION; PHOTOELECTRONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON; SILICON OXIDES; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; TRITIUM; VAPOR PHASE EPITAXY; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY;

SILICON WAFERS;

EID: 84879876943     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2008.4690558     Document Type: Conference Paper

References (12)

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