Modeling of GaInP/GaAs Dual-Junction solar cells including Tunnel Junction

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Baudrit, Mathieu ^a   Algora, Carlos ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

Multi Junction Solar Cells; Simulation; Tunnel Junction

Indexed keywords

ADVANCED SIMULATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL COMPONENTS; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION CELLS; RESONANT CAVITY EFFECT; SIMULATION; SINGLE JUNCTION SOLAR CELLS;

MODELS; SOLAR CELLS; TUNNEL JUNCTIONS;

COMPUTER SIMULATION;

EID: 84879737789     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922476     Document Type: Conference Paper

References (4)

1. C. Algora, et al., Pending Issues In The Modeling of Concentrator Solar Cells, Proceedings 19th European Photovoltaic Solar Energy Conference, Paris, 2004.
2. G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, A new recombination model for device simulation including tunneling in IEEE Transactions on Electron Devices 39, 331-8 (1992).
3. Silvaco International, Silvaco User's Manual, ed. Silvaco, 2006.
4. T. Takamoto, et al., Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells in Journal of Applied Physics 85, 1481-6 (1999).