Stress-induced lift-off method for kerf-loss-free wafering of ultra-thin (∼50 μm) crystalline Si wafers

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Dross, Frederic ^a   Milhe, Aurelien ^a,b   Robbelein, Jo ^a   Gordon, Ivan ^a   Bouchard, Pierre Olivier ^b   Beaucarne, Guy ^a   Poortmans, Jef ^a  

^a IMEC   (Belgium)

^b PSL RESEARCH UNIVERSITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

2-D FINITE ELEMENT METHOD; CRACK INITIATION AND PROPAGATION; CRYSTALLINE SI WAFERS; CRYSTALLINE SILICONS; HETEROJUNCTION EMITTERS; MULTI-CRYSTALLINE SILICON; MULTI-LAYERED STRUCTURE; SILICON CONSUMPTION;

CRACK TIPS; CRACKS; CRYSTALLINE MATERIALS; ENERGY CONVERSION; HETEROJUNCTIONS; SILICON; SOLAR CELLS;

SILICON WAFERS;

EID: 84879729900     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922741     Document Type: Conference Paper

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