메뉴 건너뛰기




Volumn , Issue , 2008, Pages

Surface passivation of boron diffused emitters for high efficiency solar cells

Author keywords

[No Author keywords available]

Indexed keywords

C-SI SOLAR CELL; HIGH-EFFICIENCY SOLAR CELLS; NEGATIVE CHARGE; NEGATIVELY CHARGED; PASSIVATION LAYER; POSITIVE CHARGES; SOLAR CELL EFFICIENCIES; SURFACE PASSIVATION;

EID: 84879729699     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922637     Document Type: Conference Paper
Times cited : (13)

References (14)
  • 1
    • 10044269932 scopus 로고    scopus 로고
    • Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon
    • D. Macdonald and L. J. Geerligs, "Recombination activity of interstitial iron and other transition metal point defects in p-and n-type crystalline silicon, " Appl. Phys. Lett. 85, 2004, pp. 4061-3.
    • (2004) Appl. Phys. Lett. , vol.85 , pp. 4061-4063
    • MacDonald, D.1    Geerligs, L.J.2
  • 2
    • 0040028982 scopus 로고    scopus 로고
    • Minority carrier lifetime degradation in boron-doped czochralski silicon
    • S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon, " J. Appl. Phys. 90, 2001, pp. 2397-404.
    • (2001) J. Appl. Phys. , vol.90 , pp. 2397-2404
    • Glunz, S.W.1    Rein, S.2    Lee, J.Y.3    Warta, W.4
  • 3
    • 0342704011 scopus 로고
    • 24% efficient perl silicon solar cell: Recent improvements in high efficiency silicon cell research
    • Hawaii, USA
    • J. Zhao, A. Wang, P. P. Altermatt, S. R. Wenham, and M. A. Green, "24% efficient PERL silicon solar cell: recent improvements in high efficiency silicon cell research, " Proc. 1st WCPEC, Hawaii, USA, 1994, pp. 87-99.
    • (1994) Proc. 1st WCPEC , pp. 87-99
    • Zhao, J.1    Wang, A.2    Altermatt, P.P.3    Wenham, S.R.4    Green, M.A.5
  • 4
    • 0026172209 scopus 로고
    • Studies of diffused boron emitters: Saturation current, bandgap narrowing, and surface recombination velocity
    • R. R. King and R. M. Swanson, "Studies of diffused boron emitters: saturation current, bandgap narrowing, and surface recombination velocity, " IEEE Trans. Electron Devices 38, 1991, pp. 1399-409.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1399-1409
    • King, R.R.1    Swanson, R.M.2
  • 5
    • 6344240587 scopus 로고    scopus 로고
    • The recombination velocity of boron diffused silicon surfaces
    • Barcelona, Spain
    • A. Cuevas, M. Stuckings, J. Lau, and M. Petravic, "The recombination velocity of boron diffused silicon surfaces, " Proc. 14th EC PVSEC, Barcelona, Spain, 1997, pp. 2416-
    • (1997) Proc. 14th EC PVSEC
    • Cuevas, A.1    Stuckings, M.2    Lau, J.3    Petravic, M.4
  • 6
    • 55149110059 scopus 로고    scopus 로고
    • The surface recombination velocity at boron-doped emitters: Comparison between various passivation techniques
    • Dresden, Germany
    • P. P. Altermatt, H. Plagwitz, R. Bock, J. Schmidt, R. Brendel, M. J. Kerr, and A. Cuevas, "The surface recombination velocity at boron-doped emitters: comparison between various passivation techniques, " Proc. 21st EU PVSEC, Dresden, Germany, 2006, pp. 647-50.
    • (2006) Proc. 21st EU PVSEC , pp. 647-650
    • Altermatt, P.P.1    Plagwitz, H.2    Bock, R.3    Schmidt, J.4    Brendel, R.5    Kerr, M.J.6    Cuevas, A.7
  • 9
    • 0001420554 scopus 로고    scopus 로고
    • Field-effect passivation of the si0 2-si interface
    • S. W. Glunz, D. Biro, S. Rein, and W. Warta, "Field-effect passivation of the Si0 2-Si interface, " J. Appl. Phys. 86, 1999, pp. 683-91.
    • (1999) J. Appl. Phys. , vol.86 , pp. 683-691
    • Glunz, S.W.1    Biro, D.2    Rein, S.3    Warta, W.4
  • 10
    • 0030399938 scopus 로고    scopus 로고
    • Quasi-steady-state photoconductance, a new method for solar cell material and device characterization
    • Washington DC, USA
    • R. A. Sinton, A. Cuevas, and M. Stuckings, "Quasi-steady-state photoconductance, a new method for solar cell material and device characterization, " Proc. 25th IEEE PVSC, Washington DC, USA, 1996, pp. 457-60.
    • (1996) Proc. 25th IEEE PVSC , pp. 457-460
    • Sinton, R.A.1    Cuevas, A.2    Stuckings, M.3
  • 11
    • 0000513411 scopus 로고    scopus 로고
    • Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data
    • R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority-carrier lifetimes in semiconductors from quasi-steady-state photoconductance data, " Appl. Phys. Lett. 69, 1996, pp. 2510-2.
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2510-2512
    • Sinton, R.A.1    Cuevas, A.2
  • 12
    • 0024179930 scopus 로고
    • Pc-1d version 2: Enhanced numerical solar cell modelling
    • Las Vegas, Nevada, USA
    • P. A. Basore, D. T. Rover, and A. W. Smith, "PC-1D version 2: enhanced numerical solar cell modelling, " Proc. 20th IEEE PVSC, Las Vegas, Nevada, USA, 1988, pp. 389-96.
    • (1988) Proc. 20th IEEE PVSC , pp. 389-396
    • Basore, P.A.1    Rover, D.T.2    Smith, A.W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.