Mg-doping and n+-p junction formation in MOVPE-grown In xGa1-xN (x∼0.4)

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Yamamoto, A ^a   Sugita, K ^a   Horie, M ^a   Ohmura, Y ^a   Islam, Md R ^a   Hashimoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; GAN TEMPLATE; HOMOJUNCTION; JUNCTION FORMATION; MG-DOPING; P-TYPE CONDUCTION;

PHASE SEPARATION;

SEMICONDUCTOR DOPING;

EID: 84879722174     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922870     Document Type: Conference Paper

References (3)

1. M. Miyanishi, A. Hashimoto, and A. Yamamoto, "Theoretical conversion efficiency and lattice mismatch for InGaN and InAIN tandem solar cells", Extended Abstracts of the 65 th meeting of the Japan Society of Applied Physics, No, 1, p. 312 (2004) (in Japanese).
2. O. Jani, H. Kang, E. Trybus, I. Ferguson, and A. Doolittle, "Effect of phase separation on performance of III-V nitride solar cells", Proc. 22nd European Photovoltaic Solar Energy Conference, (WIP-Renewable Energies, 2007) pp. 64-67.
3. W. Walukiewicz, J. W. Ager, and K. Man Yu, "Application of group III-nitride alloys for multijunction solar cells", The 1r" Photovoltaic Science and Engineering Conference, Fukuoka, Japan, Dec. 3-7, 2007.