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Volumn , Issue , 2008, Pages

Effect of reaction temperature on Cu(InGa)(SeS)2 formation by a sequential H2Se/H2S precursor reaction process

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; PHASE REGION; REACTION PROCESS; REACTION TEMPERATURE; THRESHOLD TEMPERATURES;

EID: 84879718248     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922470     Document Type: Conference Paper
Times cited : (10)

References (11)
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    • Alberts et al., "Material and device properties of single-phase Cu(ln, Ga)(Se, S)2 alloys prepared by selenization/sulfurization of metallic alloys, " Thin Solid Films 451-452, 2004, pp. 207-211.
    • (2004) Thin Solid Films , vol.451-452 , pp. 207-211
    • Alberts1
  • 2
    • 0037617056 scopus 로고    scopus 로고
    • Improvement of Voc upward of 600mV/cell with CIGS-based absorber prepared by selenizaiton/sulfurization
    • Tanaka et al., "Improvement of Voc upward of 600mV/cell with CIGS-based absorber prepared by selenizaiton/sulfurization, " Proc. 1 th European Photovoltaic Solar Energy Conference, 2001, pp. 989-994.
    • (2001) Proc. 1 Th European Photovoltaic Solar Energy Conference , pp. 989-994
    • Tanaka1
  • 3
    • 0035283917 scopus 로고    scopus 로고
    • Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber
    • Nagoya et al., "Role of incorporated sulfur into the surface of Cu(InGa)Se2 thin-film absorber, " Solar Energy Materials and Solar Cells 67, 2001, pp. 247-253.
    • (2001) Solar Energy Materials and Solar Cells , vol.67 , pp. 247-253
    • Nagoya1
  • 4
    • 35348903808 scopus 로고    scopus 로고
    • Incongruent reaction of Cu-(ln, Ga) intermetallic precursors in H2Se and H2S
    • Hanket et al., "Incongruent reaction of Cu-(ln, Ga) intermetallic precursors in H2Se and H2S, " J. Appl. Phys., 102 (7), 2007, p. 074922.
    • (2007) J. Appl. Phys. , vol.102 , Issue.7 , pp. 074922
    • Hanket1
  • 5
    • 1242309858 scopus 로고    scopus 로고
    • Band gap engineering in polycrystalline Cu(ln, Ga)(Se, S)2 chalcopyrite thin films
    • Alberts, V., "Band gap engineering in polycrystalline Cu(ln, Ga)(Se, S)2 chalcopyrite thin films, " Mat. Sci. Eng. 8107, 2004, pp. 139-147.
    • (2004) Mat. Sci. Eng. , vol.8107 , pp. 139-147
    • Alberts, V.1
  • 6
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    • Composition control in the growth of Cu(InGa)(SeS)2 by the reaction of Cu-In-Ga precursors in H2Se and H2S
    • Hanket et al., "Composition control in the growth of Cu(InGa)(SeS)2 by the reaction of Cu-In-Ga precursors in H2Se and H2S, " Proc. 4th World Conference on Photovoltaic Energy Conversion, 2006, pp. 560-563.
    • (2006) Proc. 4th World Conference on Photovoltaic Energy Conversion , pp. 560-563
    • Hanket1
  • 9
    • 7044232012 scopus 로고    scopus 로고
    • Phase morphology and diffusion in CulnxGa1-xSe2 thin films
    • Marudachalam et al., "Phase morphology and diffusion in CulnxGa1-xSe2 thin films, " J. Appl. Phys. 82 (6), 1997, pp. 2896-2905.
    • (1997) J. Appl. Phys. , vol.82 , Issue.6 , pp. 2896-2905
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  • 10
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    • Deposition of single-phase Cu(ln, Ga)Se2 thin films by a novel two-stage growth technique
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  • 11
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    • Ph. D. thesis, University of Delaware
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    • Verma, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.